Amorphous Oxide Semiconductor Thin Films

Differences between amorphous indium oxide thin films

inese Materials Res 16/j.pnsc.2013.08.00 : Department of Ma ity 2220 Campus SA Tel.: þ1 847 49 chang@northwester esponsibility of Chin Abstract A series of 60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased...

Holographic Recording in Amorphous Chalcogenide Semiconductor Thin Films

Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors

The dielectric properties of ZrO2–Al2O3 nanolaminates, deposited via atomic layer deposition, and their impact on the performance and stability of indium gallium zinc oxide and zinc tin oxide amorphous oxide semiconductor thin-film transistors TFTs are investigated. It is found that nanolaminate dielectrics can combine the advantages of constituent dielectrics and produce TFTs with improved per...

Optical constants and thickness determination of very thin amorphous semiconductor films

This contribution addresses the relevant question of retrieving, from transmittance data, the optical constants and thickness of very thin semiconductor and dielectric films. The retrieval process looks for a thickness that, subject to the physical input of the problem, minimizes the difference between the measured and the theoretical spectra. This is a highly underdetermined problem but, the u...

Nitrogen doping of amorphous carbon thin films

Nitrogenated and hydrogenated amorphous carbon (a-C:H:N) films have been deposited by a plasma beam source using a gas mixture of C2H2 , Ar and N2 . The Ar/C2H2 ratio is kept constant at a ratio of 3, with the nitrogen flow allowed to vary. Nonnitrogenated films, with Ar/C2H2 ratios of 3 and 6 were also deposited and analyzed before attempting to identify the modifications to the microstructura...